Academic Journal
Q3Japanese Journal of Applied Physics
About Japanese Journal of Applied Physics
Japanese Journal of Applied Physics is a scholarly journal published by Institute of Physics. SCImago 2025 places it in Q3 with an SJR of 0.282 and an H-index of 187.
Its listed coverage is 1963-2025 and its research categories include Engineering (miscellaneous) (Q3); Physics and Astronomy (miscellaneous) (Q3). The 2025 dataset reports 735 documents and 3491 citations across the latest three-year reporting window.
Journal Metrics
Metrics can change by reporting year. Verify time-sensitive values with the publisher or indexing service.
Aims & Scope
The journal publishes research related to Semiconductor materials and devices, Semiconductor Quantum Structures and Devices, Thin-Film Transistor Technologies, Photonic and Optical Devices, Semiconductor materials and interfaces, GaN-based semiconductor devices and materials.
Recent Research Articles
Latest publications matched automatically by ISSN.
Electronic stopping cross sections along GaN for low-velocity typical element projectiles
Kazuhiro Mochizuki, Tomoaki Nishimura, Tetsu Kachi, Fumimasa Horikiri et al.
2026-09-15 · DOI: 10.35848/1347-4065/ae9f05Concentration- and ion-specific modulation of lateral lipid diffusion in a supported phospholipid bilayer
Yu Kinjo, Ryugo Tero
2026-09-15 · DOI: 10.35848/1347-4065/ae9ecdMultiple-channel AlScN/GaN field-effect transistors
Aias Asteris, Kazuki Nomoto, Thai-Son Nguyen, Chandrashekhar Savant et al.
2026-09-15 · DOI: 10.35848/1347-4065/ae9dccDesign and spectroscopic characterization of a multilayer optical cavity structure for iridium optical transition-edge sensors
Daizo Nagahara, Yuki Mitsuya, Hiroyuki Takahashi
2026-09-15 · DOI: 10.35848/1347-4065/ae9dcdComposition dependences of ferroelectric and piezoelectric properties in 500 nm-thick x CeO 2 −(1− x )HfO 2 films deposited on (111)ITO//(111)YSZ substrates by sputtering method
Yu-Ta Chen, Kazuki Okamoto, Shunshi Imamura, Yukari Inoue et al.
2026-09-15 · DOI: 10.35848/1347-4065/ae9b17Single-molecule detection and quantification of O 6 -methylguanine using electrical tunneling fingerprints
Shinya Sakano, Wataru Takahagi, Miyuka Suzuki, Yuki Komoto et al.
2026-09-08 · DOI: 10.35848/1347-4065/aea42aDeposition temperature dependence of crystal orientation and ferroelectric properties in thick HfO 2 –CeO 2 films
Shunshi Imamura, Kazuki Okamoto, Yukari Inoue, Hiroyuki Ono et al.
2026-09-15 · DOI: 10.35848/1347-4065/ae9b18Controlled vesicle fusion on supported lipid bilayers via pH-induced proton permeation
Yurika Inoue, Azusa Oshima, Aya Tanaka, Akira HEYA et al.
2026-09-08 · DOI: 10.35848/1347-4065/aea42bEvaluation of nonvolatile memory using intersubband transitions and quantum-well electron accumulation in GaN/AlN resonant tunneling diodes with AlGaN interlayers
Masanori Nagase, Tokio Takahashi, Mitsuaki Shimizu
2026-09-07 · DOI: 10.35848/1347-4065/aea3d2Quantitative evaluation of gas-barrier performance in a-ZTO and a-SiN x films using TCO electrical probes
Minseok Kim, Keisuke Tsushima, Yukina Asanuma, Yuzo SHIGESATO et al.
2026-09-07 · DOI: 10.35848/1347-4065/aea3d4Vacancy-mediated nitrogen diffusion and aggregation via high-fluence electron beam irradiation in HPHT synthesized diamond crystal
Chikara Shinei, Yuta Masuyama, Jun Chen, Hiroshi Abe et al.
2026-09-07 · DOI: 10.35848/1347-4065/aea3d1One-step preparation of Ni and Co films using a gel/liquid hybrid electroplating method
Takeshi Yanai, Mayuri Tashiro, Shota Enokida, Ryo Kirihara et al.
2026-09-07 · DOI: 10.35848/1347-4065/aea339Inducing spontaneous orientation polarization in hole transport layers by dipolar doping without compromising charge transport
Yutaka Noguchi, Mihiro Takeda, Masaki Yono
2026-09-15 · DOI: 10.35848/1347-4065/ae9b16Terahertz sensing via electro-optic effect in a triple-coupled microcavity
Takahiro Kitada, Yukihiro Harada, Yasuo Minami, Toshiyuki Kaizu et al.
2026-09-15 · DOI: 10.35848/1347-4065/ae9dceTheoretical investigation of lead-free flexible CH 3 NH 3 BiI 3 -based perovskite solar cells using SCAPS-1D software.
Shahariar Hasan Rumel, Sunirmal Kumar Biswas
2026-09-07 · DOI: 10.35848/1347-4065/aea3d3Energy storage properties of SrTiO 3 added (Ba,Ca)(Zr,Ti)O 3 ceramics
Alexander Martin, Masato Okamura, Isao Kagomiya, Ken-ichi Kakimoto et al.
2026-09-15 · DOI: 10.35848/1347-4065/ae99ecInteraction of oxygen atoms with hydrogen-induced nanocavities in Si at annealing temperatures above 900 ºC
Atsushi KINOMURA, Masatoshi Hiroe, Hidetsugu Tsuchida, Kohtaku Suzuki et al.
2026-09-04 · DOI: 10.35848/1347-4065/aea2fbNumerical simulation of electron mobility in ultra-thin silicon nanosheets with out-of-plane phonons
Hikaru Horii, Akiko Ueda, Yoshihiro Hayashi
2026-09-04 · DOI: 10.35848/1347-4065/aea2faPotential distribution and anode dissolution in gel electroplating of Ni films using chloride- and sulfate-based electrolytes
Takeshi Yanai, Shota Enokida, Mayuri Tashiro, Ryo Kirihara et al.
2026-09-04 · DOI: 10.35848/1347-4065/aea29fIntegration of diamond nanobeams with SnVs on Al 2 O 3 waveguides for scalable quantum photonic chip application
Yeting Yang, Ryota Kitagawa, Tetsuya Miyatake, Masaharu Hida et al.
2026-09-15 · DOI: 10.35848/1347-4065/ae91b1Reviews
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September 7, 2026 at 11:59 pm
September 7, 2026