Academic Journal
Q1Applied Physics Letters
About Applied Physics Letters
Applied Physics Letters is a scholarly journal published by American Institute of Physics. SCImago 2025 places it in Q1 with an SJR of 0.856 and an H-index of 498.
Its listed coverage is 1962-2026 and its research categories include Physics and Astronomy (miscellaneous) (Q1). The 2025 dataset reports 2770 documents and 25902 citations across the latest three-year reporting window.
Journal Metrics
Metrics can change by reporting year. Verify time-sensitive values with the publisher or indexing service.
Aims & Scope
The journal publishes research related to Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, Photonic and Optical Devices, GaN-based semiconductor devices and materials, ZnO doping and properties, Magnetic properties of thin films.
Recent Research Articles
Latest publications matched automatically by ISSN.
Diameter-tuned emission from InGaN/GaN nanowire arrays
Qi Chen, Bo Shi, Meng Liang, Junjie Kang et al.
2026-09-07 · DOI: 10.1063/5.0347511Multidimensional control of optical filamentation via sub-cycle delay modulation of two femtosecond pulses
Dongwei Li, Boyu Ji, Jinshuai Wu, Tingting Xi et al.
2026-09-07 · DOI: 10.1063/5.0336602Defect-induced self-trapping and stabilization of excitons by strong electron–phonon coupling in vacancy-ordered perovskite Cs2SnCl6
Chaojie Hu, Yinglin Guan, Junjie Zhou, Wenbo Xiao et al.
2026-09-07 · DOI: 10.1063/5.0332519Non-blocking grain boundaries for Li-ion transport in Li3YCl6 halide electrolyte
Lixin Xiong, Boyi Zhang, Wenwei Luo, Longbing Shang et al.
2026-09-07 · DOI: 10.1063/5.0345555Zr-related states in AlN probed by photocurrent excitation spectroscopy
F. A. Rafi, H. Alwan, J. Li, J. Y. Lin et al.
2026-09-07 · DOI: 10.1063/5.0347982Radiation effects of heavy ions in hydrogen-terminated diamond field-effect transistors
Yang Liu, Xing Li, Si-Lei Zhong, Weili Fu et al.
2026-09-07 · DOI: 10.1063/5.0345345A 170–260-GHz high-power tripler using a large-scale SPP-resonant diode array
Hailong Guo, Hongji Zhou, Jun Zhou, Jingrui Liang et al.
2026-09-07 · DOI: 10.1063/5.0349412Stacking-enabled higher-order extended states in localized continua of non-Hermitian topolectrical circuits
Yaqi Zhao, Bowen Yang, Wei Lin, Xiaoyu Dai et al.
2026-09-07 · DOI: 10.1063/5.0350514Carrier recombination kinetics and dual-emission mechanism modulated via Sb3+ doping in zero-dimensional hybrid zinc halide
Weizhong Chen, Hengyi Shu, Tingfu Pang, Hongsheng Zhang et al.
2026-09-07 · DOI: 10.1063/5.0349434High-temperature self-powered solar-blind ultraviolet photodetectors based on boron-doped diamond
Mingyu Zhang, Shoulong Lai, Hang Liu, Wuyou Zhang et al.
2026-09-07 · DOI: 10.1063/5.0348829Universal topological magnetoresistance probed in Fe3GeTe2 at skyrmion state
Hao Nie, Leilei Duan, Yaoping Deng, Yu Zhao et al.
2026-09-07 · DOI: 10.1063/5.0344193Honeycomb superstructure enabled by Mg doping for enhanced anionic redox reversibility in layered oxide cathodes
Kelin Liu, Ziyang Song, Ren Huang, Dong Yan et al.
2026-09-07 · DOI: 10.1063/5.0349597Time-division multiplexed microwave-induced thermoacoustic and ultrasound tomography for complementary structural and dielectric imaging
Rui Zhu, Desheng Li, Qi Ruan, Lizhang Zeng et al.
2026-09-07 · DOI: 10.1063/5.0345113Origin of peak splitting in polydomain Hf0.5Zr0.5O2 ferroelectric capacitors
Artyom Shcherbakov, Elizaveta Kalika, Anastasia Chouprik
2026-09-07 · DOI: 10.1063/5.0347631Plasmonic random lasing in silver nanoplate-incorporated donor–acceptor–donor organic dye-filled capillary fibers
Ja-Hon Lin, Hsin-Yi Wei, Ba-Hao Liu, Tzu-Chau Lin et al.
2026-09-07 · DOI: 10.1063/5.0349769Calibration-free single-pixel 3D imaging
Chongyang Zhang, Guohang Wu, Junfeng Guo, Hongran Zeng et al.
2026-09-07 · DOI: 10.1063/5.0353822Transverse electric (TE) and transverse magnetic (TM) mode behavior in magnetic actuated metal-hybrid microlasers
Md Nazmus Sakib, Maurizio Manzo
2026-09-07 · DOI: 10.1063/5.0347695Self-powered programmable UV optoelectronic logic gates via polarity-reversal photocurrent in a Ga2O3/GaN heterojunction
Xumin Gao, Zheheng Liu, Sirui Wu, Xiang Gao et al.
2026-09-07 · DOI: 10.1063/5.0343859Diode-pumped single-longitudinal-mode DBR fiber laser operating on the barium ion E2 transition
Khawlah AlYahyaei, Xiushan Zhu, Jie Zong, Maohe Li et al.
2026-09-07 · DOI: 10.1063/5.0339172Assessing the role of Hg vacancies as Shockley–Read–Hall recombination centers in Hg1−xCdxTe alloys
Fatimah Alowa, Masahiko Matsubara, Enrico Bellotti
2026-09-07 · DOI: 10.1063/5.0345360Reviews
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September 7, 2026 at 11:58 pm
September 7, 2026