Academic Journal
Q2IEEE Journal of the Electron Devices Society
About IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society is a scholarly journal published by Institute of Electrical and Electronics Engineers Inc.. SCImago 2025 lists it in Q2, with an SJR of 0.506 and H-index of 57.
Coverage: 2013-2026. Research categories: Electrical and Electronic Engineering (Q2); Electronic, Optical and Magnetic Materials (Q2); Biotechnology (Q3).
Open-access policies and author information
Reported in the official DOAJ public CSV snapshot (2026-09-01), downloaded 2026-10-03. Record updated 2026-03-12. This snapshot does not establish today’s listing status or fee quotation.
Publisher policy links recorded by DOAJ
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Source: DOAJ journal record. Journal metadata is distributed by DOAJ under CC0. Confirm current fees, tax, eligibility and waiver terms with the publisher.
Source-backed journal facts
Topics in published research
Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices; Silicon Carbide Semiconductor Technologies; Thin-Film Transistor Technologies; GaN-based semiconductor devices and materials.
OpenAlex classifies topics from published works. These topics are not the publisher’s official aims and scope.
Source: OpenAlex source record. Retrieved 2026-10-03. Source record updated 2026-10-02. OpenAlex metrics are different from SCImago metrics and the Clarivate Journal Impact Factor.
Journal Metrics
Quartile, SJR and the listed SCImago H-index use the 2025 imported SCImago dataset. A quartile may vary by subject category. Values without a source or reporting year are unverified historical entries. Verify the current Journal Impact Factor with Clarivate or the publisher before using it.
Aims & Scope
The publisher’s official aims and scope have not yet been verified for this profile. Use the journal website to check subject fit and accepted article types before submitting.
Recent Research Articles
Latest publications matched automatically by ISSN.
Impact of Back-Bias on Analog Performance at Cryogenic Temperature in 22-nm FDSOI MOSFETs for Quantum Computing Applications
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Yanghao Wang, Hang Xu, Peng Liao, Jianbin Guo et al.
2026 · DOI: 10.1109/jeds.2026.3653934First Demonstration of the Positive Threshold Voltage Shift in InAlGaN/GaN HEMT by Adopting Hybrid Ferroelectric Charge Trap Gate Stack (FEG) With Tri-Gate Structure
Shu En Hsu, Rahul Rai, Phuong Anh Tran, Hung Duy Tran et al.
2026 · DOI: 10.1109/jeds.2026.3728467A Novel Hybrid-Collector Tunneling IGBT With Enhanced Operating Temperature
Chang-Hao Wang, Xin-Ru Chen, Jian-Bin Guo, Qing-Qing Sun et al.
2026 · DOI: 10.1109/jeds.2025.3579146Bridging Semiconductor Technology and Deep Learning Models: From Architectures to Domain-Specific Challenges
Man Luo, Yang Zhou, Wenbo Jiao, Yi Ma et al.
2026 · DOI: 10.1109/jeds.2026.3717559On the In x Ga 1-x As Channel Noise in InP HEMTs From 4 K to 300 K
Junjie Li, Justin H. Chen, Austin J. Minnich, Jan Grahn et al.
2026 · DOI: 10.1109/jeds.2026.3730543Sb-Doped Substrates for Low-Noise Silicon Photomultipliers
Shifeng Zhang, Jiangteng Xia, Yanling Ren, Fudexuan Huang et al.
2026 · DOI: 10.1109/jeds.2026.3661177Memcapacitor-Based Insect Feeding Behaviour Classification With Reservoir Computing
Lautaro N. Petrauskas, Anju Kumari R., Stefan C. B. Mannsfeld, Bahman K. Boroujeni et al.
2026 · DOI: 10.1109/jeds.2026.3661727Effect of Terbium Doping on ITZO Thin-Film Transistors for Improved Bias-Stress Stability
Jiajun Sun, Yayi Chen, Wenbo Zhao, Wei Zhong et al.
2026 · DOI: 10.1109/jeds.2026.3727439a-IGZO TFT Pixel Circuit With Double Gate Structure for Compensation of V TH Shift and SS-Induced Low-Gray Dispersion in AMOLED Displays
Hyunwoo Kim, Jinho Moon, Sanghyun Park, Yongchan Kim et al.
2026 · DOI: 10.1109/jeds.2026.37273112xVDD-Tolerant ESD Clamp With Dual Detection and Ultra-Low Leakage
Kuan-Ying Chen, Shih-Hsin Wu, Po-Xiao Chen, Chun-Yu Lin et al.
2026 · DOI: 10.1109/jeds.2026.3674432An Improved SVR-Based Broadband Behavioral Model for RF Power Transistors
Zhiwei Gao, Giovanni Crupi, Jialin Cai
2026 · DOI: 10.1109/jeds.2026.3693317DC-Guided Two-Point RF Estimation of Cutoff Frequency and Intrinsic Gain in FinFETs in the Slow-Trap Degradation Regime
Alan Y. Otero-Carrascal, Purushothaman Srinivasan, Edmundo A. Gutierrez-D, Oscar Huerta-Gonzalez et al.
2026 · DOI: 10.1109/jeds.2026.3738018Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization
Stanislav Sin, Saeroonter Oh
2026 · DOI: 10.1109/jeds.2025.3648736Impact of Dislocations on Minority Carrier Lifetime in 300-mm Si Wafers During a High Thermal Budget Process
Jiuyang Yuan, Bozhou Cai, Yoshiji Miyamura, Wataru Saito et al.
2026 · DOI: 10.1109/jeds.2025.3637754Novel Relationship Between Breakdown Voltage and Specific On-Resistance of Accumulation-Mode VDMOS
Baoxing Duan, Jidong Jiao, Haitao Song, Yintang Yang et al.
2026 · DOI: 10.1109/jeds.2026.3704483Early-Stage Decision-Making for Wearable and Invisible Digital Health Technologies: A Staged Multi-Criteria Value Framework
Inês Galrão Gregório, Hugo Plácido Da Silva, Ana F. A. Dos Santos, Ana C. L. Vieira et al.
2026 · DOI: 10.1109/jeds.2026.3695296Stress-Modulated Defect Engineering in Monolayer WS2: A First-Principles Study
D Sharda Devi, Tarun Agarwal, Nihar R. Mohapatra
2026 · DOI: 10.1109/jeds.2026.3732190Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone et al.
2026 · DOI: 10.1109/jeds.2025.3641046Ultra-Low Voltage Reconfigurable FETs in 22nm FDSOI Technology Enabling Dynamic Circuit Obfuscation for Embedded Security
Yuxuan He, Aniruddh Holemadlu, Niladri Bhattacharjee, Giulio Galderisi et al.
2026 · DOI: 10.1109/jeds.2026.3654187Reviews
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Version History
October 2, 2026 at 9:26 pm
October 2, 2026