Academic Journal
Q1IEEE Transactions on Electron Devices
About IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices is a scholarly journal published by Institute of Electrical and Electronics Engineers Inc.. SCImago 2025 places it in Q1 with an SJR of 0.809 and an H-index of 221.
Its listed coverage is 1963-2026 and its research categories include Electrical and Electronic Engineering (Q1); Electronic, Optical and Magnetic Materials (Q2). The 2025 dataset reports 1032 documents and 12646 citations across the latest three-year reporting window.
Journal Metrics
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Aims & Scope
The journal publishes research related to Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Silicon Carbide Semiconductor Technologies, Semiconductor Quantum Structures and Devices, Ferroelectric and Negative Capacitance Devices, Thin-Film Transistor Technologies.
Recent Research Articles
Latest publications matched automatically by ISSN.
Impact of Nondiffusive Phonon Transport on the Dynamic Electrothermal Behavior of CFET
Kunlong An, Pengcong Mu, Hao He, Xiaoning Ma et al.
2026-09 · DOI: 10.1109/ted.2026.3711611A Strategy for Lift-Off Monitoring and Temperature Decoupling of IGBT Bond Wires Based on Crosstalk Gate Voltage
Mingxing Du, Zhihao Zhang, Gengji Wang
2026-09 · DOI: 10.1109/ted.2026.3712722Crystal-Face-Dependent Electron Mobility Due to Distinct Interface Trap Distributions in SiC n-Channel MOSFETs
Xilun Chi, Koji Ito, Kyota Mikami, Mitsuaki Kaneko et al.
2026-09 · DOI: 10.1109/ted.2026.3709762High-Throughput Screening of Excitatory/Inhibitory FeFETs for Customizable Spiking Neural Networks
Jiaqi Yan, Liyufen Dai, Xiangli Zhong, Yongshuai Ge et al.
2026-09 · DOI: 10.1109/ted.2026.3710163Compact Model of Enhancement-Mode GaN HEMTs Realized by Charge-Trap Layer Structure
Kang Hee Lee, Junseok Heo, Hyunwoo Kim, Jang Hyun Kim et al.
2026-09 · DOI: 10.1109/ted.2026.3707823Experimental Characterization of Dispersion and Phase Velocity in a Miniaturized Double-V Meander-Line Slow-Wave Structure
Giuseppe Paterna, Salvatore Stivala, Patrizia Livreri, F. Di Maggio et al.
2026-09 · DOI: 10.1109/ted.2026.3717012Mechanistic Optimization of Spacer-Type Split-Gate Flash Balancing Yield and Performance
Wanyi Ling, Dianyu Qi, Yongyu Wu, Guangji Li et al.
2026-09 · DOI: 10.1109/ted.2026.3712335Enhancing Gate Reliability of p-GaN Gate HEMTs by Segmented-Gate Contact Structures
Yilong Lei, Ting Zhou, Lili Zhai, Zhibo Cheng et al.
2026-09 · DOI: 10.1109/ted.2026.3717556Over 2 GW/cm 2 Low Leakage Vertical β -Ga 2 O 3 Schottky Barrier Diode With Multizone JTE via Self-Aligned NiO/ β -Ga 2 O 3 Co-Etching
Lequan Wang, Junpeng Wen, Weibing Hao, Jinyang Liu et al.
2026-09 · DOI: 10.1109/ted.2026.3714748Enhanced Long-Term Memory (LTM) of BTO-/ZQDs-Based Optoelectronic Synapse
Monu Kumar, Varun Goel, Yogesh Kumar
2026-09 · DOI: 10.1109/ted.2026.3717010An Optimized Process Variation Simulation Framework for Nanoscale Semiconductor Device by Improved 3-D Quantum-Corrected Carrier Transport Simulation Method
Yiqun Niu, Wenchao Chen, Liang Tian, Qinyi Huang et al.
2026-09 · DOI: 10.1109/ted.2026.3714376Synergistic Effects of Oxygen Annealing and Low-Fluence Kr Ion Irradiation on 4H-SiC and β -Ga 2 O 3
Yuhao Wang, Yun Li, Chenglin Liao, Weihao Lin et al.
2026-09 · DOI: 10.1109/ted.2026.3718393Design and Fabrication of a 7-GHz Bandpass Filter Based on Solidly Mounted A1-Mode LiNbO 3 XBAR With Dielectric Bragg Reflectors
Zishuo Zhang, Rui Ding, Junye Lin, Mingyu Chen et al.
2026-09 · DOI: 10.1109/ted.2026.3714380A Hybrid Optimized WOA Parameter Extraction Algorithm of Perovskite Solar Cells' Three-Diode Core Equivalent Circuit Model
Yuanjun Liu, Bingyan Quan, Erkun Ke, Junfan Chen et al.
2026-09 · DOI: 10.1109/ted.2026.3714362Influence of Operating Regions on Synaptic Characteristics of Charge-Trapping Thin-Film Transistors
Younggeon Ko, Danyoung Cha, Sungsik Lee
2026-09 · DOI: 10.1109/ted.2026.3714371Fabrication and Experimental Test of Low-Loss Waveguide Mode Converters for 0.34-THz Vacuum Electron Devices
Guo Guo, Zeyuan Yang, Haofei Li, Fei Shen et al.
2026-09 · DOI: 10.1109/ted.2026.3717561On the Study of Dynamic Power Dissipation and Switching Speed of Inkjet-Printed RF MoS 2 Nonvolatile Switches for Wireless IoT Applications
Zirui Zhang, Zixing Peng, Xiaoyu Xiao, Xianyue Liao et al.
2026-09 · DOI: 10.1109/ted.2026.3716695Investigations on Surge Current Capability and Failure Mechanism of SiC MOSFETs in Third Quadrant
Zixuan Ye, Xiaochuan Deng, Haohao Dai, Xing Zeng et al.
2026-09 · DOI: 10.1109/ted.2026.3714364Back-Gate Effect Mechanism and Mitigation in High-Voltage Thick-Layer SOI pLDMOS Using a Field Plate-Bulk Dual Depletion Structure
Ying Xiang, Teng Liu, Nailong He, Yujing Fu et al.
2026-09 · DOI: 10.1109/ted.2026.3714753Sub-THz Characterization and Transient TCAD Modeling of SiGe HBTs: Collector Profile Optimization for Power Amplifiers
Arnab Saha, Raphael Strenaer, Thomas Zimmer, Philippe Cathelin et al.
2026-09 · DOI: 10.1109/ted.2026.3716197Reviews
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September 8, 2026 at 12:03 am
September 8, 2026