
Academic Journal
Q3Journal of Semiconductor Technology and Science
About Journal of Semiconductor Technology and Science
Journal of Semiconductor Technology and Science is a scholarly journal published by Institute of Electronics Engineers of Korea. SCImago 2025 lists it in Q3, with an SJR of 0.252 and H-index of 24.
Coverage: 2005, 2009-2025. Research categories: Electrical and Electronic Engineering (Q3); Electronic, Optical and Magnetic Materials (Q3).
Source-backed journal facts
Topics in published research
Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Radio Frequency Integrated Circuit Design; Analog and Mixed-Signal Circuit Design; Advancements in PLL and VCO Technologies; Integrated Circuits and Semiconductor Failure Analysis.
OpenAlex classifies topics from published works. These topics are not the publisher’s official aims and scope.
Source: OpenAlex source record. Retrieved 2026-10-03. Source record updated 2026-10-02. OpenAlex metrics are different from SCImago metrics and the Clarivate Journal Impact Factor.
Journal Metrics
Quartile, SJR and the listed SCImago H-index use the 2025 imported SCImago dataset. A quartile may vary by subject category. Values without a source or reporting year are unverified historical entries. Verify the current Journal Impact Factor with Clarivate or the publisher before using it.
Aims & Scope
The publisher’s official aims and scope have not yet been verified for this profile. Use the journal website to check subject fit and accepted article types before submitting.
Recent Research Articles
Latest publications matched automatically by ISSN.
Hot-Carrier Lifetime Prediction of P-Channel MOSFETs in the Subthreshold Region
Yoon Tae Jeong, Jae Seung Woo, Jin Ho Chang, Hye Sun Sung et al.
2026-08-31 · DOI: 10.5573/jsts.2026.26.4.283Voltage Control Scheme to Mitigate Thermal Effects in Hybrid Bonding 3D NAND
Dohyun Kim, Wonbo Shim
2026-08-31 · DOI: 10.5573/jsts.2026.26.4.292Design of Capacitorless Dynamic Random-Access Memory based on GAA JLFET with Vertically Stacked Storage Layer and Underlapped Gate Structure
Won Suk Koh, Jin Park, Gang San Yun, Soo Bean Song et al.
2026-08-31 · DOI: 10.5573/jsts.2026.26.4.272Optical Properties of Hexagonal Mg<sub>x</sub>Zn<sub>1−x</sub>O Thin Films Deposited by RF Reactive Magnetron Sputtering
Hai Dang Ngo, Bao Quan Tran, Khac Binh Nguyen, Hoai Phuong Pham et al.
2026-08-31 · DOI: 10.5573/jsts.2026.26.4.257Optimization of 28 nm FDSOI CMOS Inverter Design Using Deep Learning Algorithm
Tae Young Yoon, Kang Hee Lee, Jun Seok Lee, Mincheol Kim et al.
2026-08-31 · DOI: 10.5573/jsts.2026.26.4.249A 5.5 ppm/℃, 4.5-nW Wide Temperature Range Sub-threshold CMOS Voltage Reference
Balaramamurty Sannidhi, G. V. K. Sharma
2026-08-31 · DOI: 10.5573/jsts.2026.26.4.265An Improved SPICE Macro Model for Floating Body Partially Depleted SOI MOSFETs
Wongi Cho, Seonghearn Lee
2026-08-31 · DOI: 10.5573/jsts.2026.26.4.239MOCASLL: Maximum Output Corruption Anti-SAT Logic Locking
Weizheng Wang, Xiang Zhu, Tieqiao Liu
2026-06-30 · DOI: 10.5573/jsts.2026.26.3.212A 675.2 nJ/frame Keypoint Extraction Processor for LiDAR-based SLAM
Kyuho Lee
2026-06-30 · DOI: 10.5573/jsts.2026.26.3.222Nonzero-aware PE Line Partitioning for Improved Bandwidth Utilization in DRAM Bandwidth-scalable SpMV Accelerators
Hyunji Kim, Ji-Hoon Kim
2026-06-30 · DOI: 10.5573/jsts.2026.26.3.22814-Gb/s 0.115-pJ/bit Time-domain Receiver with Track-and-hold Integrated Voltage-to-time Converter for Low-power Memory Interface
Jun-Cheol Lee, Joo-Hyung Chae
2026-06-30 · DOI: 10.5573/jsts.2026.26.3.235Micro-LED and OLED Hybrid Devices for Application as Full-color Display Pixels
Shengcheng Liu, Jiawei Yuan, Liu Qian, Zhibing Yan et al.
2026-06-30 · DOI: 10.5573/jsts.2026.26.3.192Particle Reduction through Temperature Control in Furnace Equipment for LPCVD Process
Daeman Seo, Sungman Lee, Seungjae Baik, In-Ho Lee et al.
2026-06-30 · DOI: 10.5573/jsts.2026.26.3.203Digital-memory Hybrid Counter-based SRAM In-memory Computing
Siyeol Lee, Dasom Ahn, Sung Hun Jin, Taehui Na et al.
2026-06-30 · DOI: 10.5573/jsts.2026.26.3.181Design of High-speed and Low Cost Bitonic Sorting Network
Myungchul Yoon
2026-04-30 · DOI: 10.5573/jsts.2026.26.2.174Analysis of Non-ideal Ohmic Characteristics in Mg-incorporated P-type GaN Contacts
Nak-Hyeon Kim, Min-Jeoung Kim, Ho-Young Cha
2026-04-30 · DOI: 10.5573/jsts.2026.26.2.91Performance and Reliability Improvement of Double-gate Structure-based Flexible PBTTT Organic Thin-film Transistors
Ah-Hyun Hong, Hyungjun Choi, Kyeungbin Kim, Dong-Wook Park et al.
2026-04-30 · DOI: 10.5573/jsts.2026.26.2.167A Novel Parameter Extraction Technique for Off-state Equivalent Circuit Model of Body-Contact PD-SOI MOSFETs
Seunghun Yi, Seonghearn Lee
2026-04-30 · DOI: 10.5573/jsts.2026.26.2.114A 5G Millimeter-wave n257 Band CMOS Down-conversion Mixer with Inner-diameter-shared Source Degeneration Inductors
Jinman Myung, Geonwoo Park, Ho Kim, Suyeon Lee et al.
2026-04-30 · DOI: 10.5573/jsts.2026.26.2.159Effect of Top Electrode Work Function on Switching and Synaptic Characteristics of HfO₂/ZnO-based Memristive Device
Yu-Bin Kim, Sung-Ho Kim, Dong-Min Kim, Chae-Min Yeom et al.
2026-04-30 · DOI: 10.5573/jsts.2026.26.2.106Reviews
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October 2, 2026