Academic Journal
Q2Memories – Materials, Devices, Circuits and Systems
About Memories – Materials, Devices, Circuits and Systems
Memories - Materials, Devices, Circuits and Systems is a scholarly journal published by Elsevier Ltd. SCImago 2025 lists it in Q2, with an SJR of 0.488 and H-index of 15.
Coverage: 2022-2026. Research categories: Computational Mechanics (Q2); Computer Science (miscellaneous) (Q2); Electrical and Electronic Engineering (Q2); Engineering (miscellaneous) (Q2); Materials Science (miscellaneous) (Q2).
Open-access policies and author information
Reported in the official DOAJ public CSV snapshot (2026-09-01), downloaded 2026-10-03. Record updated 2026-04-27. This snapshot does not establish today’s listing status or fee quotation.
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Source-backed journal facts
Topics in published research
Advanced Memory and Neural Computing; Ferroelectric and Negative Capacitance Devices; Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Neuroscience and Neural Engineering; Analog and Mixed-Signal Circuit Design.
OpenAlex classifies topics from published works. These topics are not the publisher’s official aims and scope.
Source: OpenAlex source record. Retrieved 2026-10-03. Source record updated 2026-10-02. OpenAlex metrics are different from SCImago metrics and the Clarivate Journal Impact Factor.
Journal Metrics
Quartile, SJR and the listed SCImago H-index use the 2025 imported SCImago dataset. A quartile may vary by subject category. Values without a source or reporting year are unverified historical entries. Verify the current Journal Impact Factor with Clarivate or the publisher before using it.
Aims & Scope
The publisher’s official aims and scope have not yet been verified for this profile. Use the journal website to check subject fit and accepted article types before submitting.
Recent Research Articles
Latest publications matched automatically by ISSN.
Ultra-high bit density liquid-state colloidal memory
Bing-Yang Shih, Senne Fransen, Radin Tahvildari, Vasu Siddeswara Kalangi et al.
2026-12 · DOI: 10.1016/j.memori.2026.100143Integrating device simulation with machine learning for improved characteristic of halo doped gate stack triple metal gate all around (HD-GS-TM-GAA) MOSFET
Rashmi Gupta, Neeraj Gupta, Prashant Kumar
2026-12 · DOI: 10.1016/j.memori.2026.100145Role of ultra-thin MgO tunneling and blocking layers in HfO2-based charge trap flash memory
Abhinav Gorthy, Vamshi Kiran Gogi, Ramesh Srinivasan, Joshua Mayersky et al.
2026-12 · DOI: 10.1016/j.memori.2026.100147Multirate low-latency hardware architectures using dual-port memories for real-time spectral processing systems
Mohammed Bahoura
2026-12 · DOI: 10.1016/j.memori.2026.100142A common-mode-tolerant complementary-input strong-arm comparator for compute-in-memory readout circuits
Alireza Ahrar, Mohammad Reza Pazhouhandeh, Antoine Frappe, Amirali Amirsoleimani et al.
2026-12 · DOI: 10.1016/j.memori.2026.100148Exploring mem-element emulators: A review
Rahul Kumar Gupta, Varun Saxena, Mahipal Singh Choudhry
2026-12 · DOI: 10.1016/j.memori.2026.100146Radiation-hardened 8T SRAM-based in-memory computing architecture
Sagheer Ahmed, Sandeep Kour, Sagar Soni, Aryan Kannaujiya et al.
2026-12 · DOI: 10.1016/j.memori.2026.100144A Probabilistic Circuit with Phase Change Memory Nanodevices & Pass Transistor Logic Selectors
Sadid Muneer, Sameia Zaman, Md. Al Amin Ashik, Toufiq Mohammad Hasan et al.
2026-09 · DOI: 10.1016/j.memori.2026.100149Lead-free Cs2CuBiCl6 double perovskite for ReRAM: Electrode-dependent resistive switching and performance analysis
Rajib Sutradhar, Chinmaya Kumar Pradhan, Himangshu Jyoti Gogoi, Pukhrambam Puspa Devi et al.
2026-06 · DOI: 10.1016/j.memori.2026.100140True random number generators in modern cryptography: A review
Parul Sharma, Syed Farah Naz, Ambika Prasad Shah
2026-06 · DOI: 10.1016/j.memori.2026.100138Interface barrier-driven memristive switching in Al2O3/BFO heterostructures for advanced memory applications
Shah Zahid Yousuf, Sreenivasulu Mamilla, N.V.L. Narasimha Murty
2026-06 · DOI: 10.1016/j.memori.2026.100139Memory-power efficient 2-D FIR filter designs exploiting rotational and octagonal symmetry using parallel DA for image processing
Venkata Krishna Odugu, Swathi Odugu, Harish Babu Gade, Banothu Bapuji et al.
2026-06 · DOI: 10.1016/j.memori.2026.100141Energy-efficient non-volatile latch using SOT-MTJ for enhanced logic and memory applications
Nikhil M.L., T.Y. Satheesha, Shashidhara M., Abhishek Acharya et al.
2026-03 · DOI: 10.1016/j.memori.2025.100137Performance investigation of 1T1R memory cell using GAA MBC-FET technology
Rinku Rani Das, Devenderpal Singh, Alex James
2025-12 · DOI: 10.1016/j.memori.2025.100136Simplifying activations with linear approximations in neural networks
Srinivas Rahul Sapireddy, Kazi Asifuzzaman, Rahman Mostafizur
2025-12 · DOI: 10.1016/j.memori.2025.100134Role of electrode materials in resistive switching mechanisms of oxide-based memristors for enhanced neuromorphic computing: A comprehensive study
Armin Gooran-Shoorakchaly, Sarah Sharif, Yaser M. Banad
2025-12 · DOI: 10.1016/j.memori.2025.100133Multi armed bandit based resource allocation in Near Memory Processing architectures
Shubhang Pandey, T.G. Venkatesh
2025-12 · DOI: 10.1016/j.memori.2025.100132Physical Unclonable Function (PUF) device based on single stage voltage amplifiers for secure signature generation in the Internet of Things
Marco Grossi, Martin Omaña
2025-12 · DOI: 10.1016/j.memori.2025.100135Compensation of active filter using p-q theory in photovoltaic systems
Farzane Soleimani Rudi, Mohammad Naser Hashemnia
2025-04 · DOI: 10.1016/j.memori.2025.100122Recent advancements and progress in development of ferroelectric field effect transistor: A review
Mandeep Singh, Nakkina Sai Teja, Tarun Chaudhary, Balwinder Raj et al.
2025-04 · DOI: 10.1016/j.memori.2025.100130Reviews
Community Reviews
Version History
October 2, 2026 at 9:28 pm
October 2, 2026