
Academic Journal
Q2Microelectronic Engineering
About Microelectronic Engineering
Microelectronic Engineering is a scholarly journal published by Elsevier B.V.. SCImago 2025 lists it in Q2, with an SJR of 0.595 and H-index of 119.
Coverage: 1983-2026. Research categories: Atomic and Molecular Physics, and Optics (Q2); Condensed Matter Physics (Q2); Electrical and Electronic Engineering (Q2); Electronic, Optical and Magnetic Materials (Q2); Nanoscience and Nanotechnology (Q2); Surfaces, Coatings and Films (Q2).
Source-backed journal facts
Topics in published research
Semiconductor materials and devices; Advancements in Photolithography Techniques; Integrated Circuits and Semiconductor Failure Analysis; Advancements in Semiconductor Devices and Circuit Design; Nanofabrication and Lithography Techniques; Advanced Surface Polishing Techniques.
OpenAlex classifies topics from published works. These topics are not the publisher’s official aims and scope.
Reported open-access list prices
2,860.00 USD; 2,610.00 EUR; 2,290.00 GBP; 337,420.00 JPY
APC list prices reported by OpenAlex, which obtains this information from DOAJ. Confirm current charges, taxes, waivers and eligibility with the publisher; this is not a fee quotation.
Source: OpenAlex source record. Retrieved 2026-10-03. Source record updated 2026-10-02. OpenAlex metrics are different from SCImago metrics and the Clarivate Journal Impact Factor.
Journal Metrics
Quartile, SJR and the listed SCImago H-index use the 2025 imported SCImago dataset. A quartile may vary by subject category. Values without a source or reporting year are unverified historical entries. Verify the current Journal Impact Factor with Clarivate or the publisher before using it.
Aims & Scope
The publisher’s official aims and scope have not yet been verified for this profile. Use the journal website to check subject fit and accepted article types before submitting.
Recent Research Articles
Latest publications matched automatically by ISSN.
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2027-01 · DOI: 10.1016/j.mee.2026.112500Modified compact modeling of tunnel diodes and its applications in ternary logic circuits
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2027-01 · DOI: 10.1016/j.mee.2026.11250540 nm-thick Pt/(Al0.9Sc0.1)N/Pt ferroelectric capacitor stacks for logic-embedded memory on 300 mm Si with wafer-scale uniformity and process stability
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2027-01 · DOI: 10.1016/j.mee.2026.112496Monolayer germanium-sulfide nanoribbons with edge defects: A quantum-transport study
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2027-01 · DOI: 10.1016/j.mee.2026.112503Channel width-dependent Schottky barrier modulation in ambipolar charge-trap memory
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2027-01 · DOI: 10.1016/j.mee.2026.112507Design of temperature resistant dual band VCO with integrated TFC circuit for studying aging affect using machine learning framework
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2027-01 · DOI: 10.1016/j.mee.2026.112506Interface engineering for dual-gated graphene transistors with high-k Bi4Ti3O12 dielectric layer
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2026-11 · DOI: 10.1016/j.mee.2026.112485Editorial Board
2026-11 · DOI: 10.1016/s0167-9317(26)00049-3From dopant diffusion to optical functionality: A computational study of hyperdoped silicon
Alberto Debernardi
2026-11 · DOI: 10.1016/j.mee.2026.112475Exploring the relationship between doping and Ti-silicidation for advanced FDSOI applications
Marie Merlin, Théo Cabaret, Helen Grampeix, Nicolas Gauthier et al.
2026-11 · DOI: 10.1016/j.mee.2026.112482Reviews
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October 4, 2026 at 9:13 pm
October 2, 2026