Academic Journal
Q2Microelectronics Reliability
About Microelectronics Reliability
Microelectronics Reliability is a scholarly journal published by Elsevier Ltd. SCImago 2025 places it in Q2 with an SJR of 0.464 and an H-index of 115.
Its listed coverage is 1962-2026 and its research categories include Atomic and Molecular Physics, and Optics (Q2); Condensed Matter Physics (Q2); Electrical and Electronic Engineering (Q2); Electronic, Optical and Magnetic Materials (Q2); Safety, Risk, Reliability and Quality (Q2); Surfaces, Coatings and Films (Q2); Nanoscience and Nanotechnology (Q3). The 2025 dataset reports 298 documents and 2207 citations across the latest three-year reporting window.
Journal Metrics
Metrics can change by reporting year. Verify time-sensitive values with the publisher or indexing service.
Aims & Scope
The journal publishes research related to Semiconductor materials and devices, Integrated Circuits and Semiconductor Failure Analysis, Advancements in Semiconductor Devices and Circuit Design, Electronic Packaging and Soldering Technologies, Reliability and Maintenance Optimization, 3D IC and TSV technologies.
Recent Research Articles
Latest publications matched automatically by ISSN.
Effects of gamma irradiation on the structural and electrical properties of SiC thin-films deposited by DC/RF magnetron sputtering
Banothu Saidulu, R. Sai Prasad Goud, Arun Nimmala, Asha P. Shirni et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116294γ-ray irradiation effects on mechanical and thermophysical properties of Ajinomoto build-up film: A comparative study
Fei Qin, Ziru Niu, Hongli Liu, Changhao Chen et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116305Reliability analysis of serpentine interconnects on soft elastomers for stretchable electronics
Zuguang Bian, Chengwu Chen, Jiayan Zhao, Xiaoliang Zhou et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116311A bridge-level bond wire lift-off monitoring method for IGBT modules insensitive to operation conditions
Mingxing Du, Chudong Tang, Zhiwu Zhang, Jinliang Yin et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116309High-k transition metal oxides in MIS Schottky diodes: Interface and charge transport mechanisms
R. Saranya, K.S. Mohan, S. Berbeth Mary, P. Nallammal et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116296SOH-guided time-to-empty prediction under battery aging: A physics-guided residual learning framework
Jiaheng Li
2026-11 · DOI: 10.1016/j.microrel.2026.116288TCAD-calibrated ML for trap-induced degradation in AlGaN/GaN HEMTs
Niketa Sharma, Amit Kumar Sharma, Pharyanshu Kachhawa
2026-11 · DOI: 10.1016/j.microrel.2026.116293Research progress on composition design of copper-based bonding wires
Pan Liu, Sujuan Zhong, Peng Guo, Xian Dong et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116297Kinetics and physics in semiconductor device reliability
Joseph B. Bernstein
2026-11 · DOI: 10.1016/j.microrel.2026.116295Thermo-mechanical warpage and cycling reliability of Cu-filled TSV wafers: Finite element modeling and experimental validation
Shiqi Chen, Saiyu Yang, Fa Wu, Jun Shen et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116307Enhanced capture cross-section of electron traps detrimental to 4H-SiC PiN diode performance (unlike 4H-SiC JBS diodes)
Shikha Kumari, Besar Asllani, Pierre Brosselard, Dominique Planson et al.
2026-11 · DOI: 10.1016/j.microrel.2026.116291Cell characteristics investigation and failure analysis under different damage modes for the reverse blocking diode thyristor
Zhiwen Li, Lin Liang, Tong Liu
2026-11 · DOI: 10.1016/j.microrel.2026.116310Comparative multiple-cell upset robustness of 8 T and 6 T complementary FET SRAM arrays under heavy-ion irradiation
Wangyong Chen, Yiting Ouyang, Zhengxin Zhang, Minghui Dong et al.
2026-10 · DOI: 10.1016/j.microrel.2026.116287Automotive semiconductor chips failure and reliability assessment: Identifying critical stressors to support safe and durable automotive systems
Cheng Hong
2026-10 · DOI: 10.1016/j.microrel.2026.116257Nonlinear bending analysis of ultrathin bilayer chips in four-point bending tests considering friction and large deflection
Dao-Long Chen, Yi-Shen Li, Chien-Ming Chen, Chin-I Tsai et al.
2026-10 · DOI: 10.1016/j.microrel.2026.116270Performance optimization through thermal tolerance and doping sensitivity of TreeFET and novel H-shaped TreeFET from device to circuit level
M. Balasubrahmanyam, Ekta Goel, G. Erna
2026-10 · DOI: 10.1016/j.microrel.2026.116289Stack-height-aware thermal management of HBM packages via selective NCF thermal conductivity strategy
Yuna Lee, Jeong Hun Song, Sang Won Yoon
2026-10 · DOI: 10.1016/j.microrel.2026.116286Effect of power cycling control strategies on failure modes and lifetime for power semiconductor devices
Maoyang Pan, Yanghai Wei, Erping Deng, Yuxing Yan et al.
2026-10 · DOI: 10.1016/j.microrel.2026.116290Degradation modeling and lifetime evaluation of a leakage signal conditioning circuit based on monotonicity-constrained BO-XGBoost
Guojin Liu, Xujing Wang, Xu Liu, Kui Li et al.
2026-10 · DOI: 10.1016/j.microrel.2026.116292Study on the drift and recovery of Vth and Ron in 650 V p-GaN gate HEMTs under repetitive short-circuit stress
Jiaofen Yang, Hongyue Wang, Ming Tao, Liang Chen et al.
2026-10 · DOI: 10.1016/j.microrel.2026.116271Reviews
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September 8, 2026 at 12:03 am
September 8, 2026