SCHOLARLY PUBLICATION

10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen, Vasile Paraschiv, Stefan Kubicek, A. Fantini, Iuliana P. Radu, Ludovic Goux, Sergiu Clima, R. Degraeve, Nico Jossart, Olivier Richard, Tom Vandeweyer, K. Seo, Paul Hendrickx, Geoffrey Pourtois, Hugo Bender, Laith Altimime, Dirk J. Wouters, J. A. Kittl, Małgorzata Jurczak

📖 Technical digest - International Electron Devices Meeting/Technical digest 📅 2011-12-01 🔗 DOI: 10.1109/iedm.2011.6131652

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📄 Abstract

We report on world’s smallest HfO2-based Resistive RAM (RRAM) cell to date, featuring a novel Hf/HfOxresistive element stack, with an area of less than 10×10 nm2, fast ns-range on/off switching times at low-voltages and with a switching energy per bit of7cycles, large on/off verified-window (>;50), no closure of the on/off window after 30hrs/200C and failure-free device operation after 30hrs/250C thermal stress, the major device-level nonvolatile memory requirements are met. Furthermore, we clarify the impact of film crystallinity on cell operation from a scalability viewpoint, the role of the cap layer and bring insight into the switching mechanisms.

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