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High‐Performance Ambipolar Diketopyrrolopyrrole‐Thieno[3,2‐b]thiophene Copolymer Field‐Effect Transistors with Balanced Hole and Electron Mobilities

Zhuoying Chen, Mi Jung Lee, Raja Shahid Ashraf, Yun Gu, Sebastian Albert‐Seifried, Martin Meedom Nielsen, Bob C. Schroeder, Thomas D. Anthopoulos, Martin Heeney, Iain A. McCulloch, Henning Sirringhaus

📄 Abstract

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm(2) V(-1) s(-1) are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

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