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Ion Gel Gated Polymer Thin-Film Transistors

Jiyoul Lee, Matthew J. Panzer, Yiyong He, Timothy P. Lodge, C. Daniel Frisbie

📄 Abstract

We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 μF/cm 2 at 10 Hz and 2 μF/cm 2 at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (>100 Hz).

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