Stable, Solution-Processed, High-Mobility ZnO Thin-Film Transistors

A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc) 2 /2-ethanolamine in methoxyethanol. This ZnO thin-film semiconductor was composed of closely packed ZnO single crystals (∼30 to 50 nm) having a hexagonal structure assuming a preferred orientation with its c -axis perpendicular to the substrate. Field-effect mobility of 5−6 cm 2 V -1 s -1 and current on-to-off ratio of 10 5 −10 6 were demonstrated with this ZnO thin-film semiconductor in thin-film transistors.