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A Graphene Field-Effect Device

Max C. Lemme, Tim J. Echtermeyer, Matthias Baus, H. Kurz

📖 IEEE Electron Device Letters → 📅 2007-04-01 🔗 DOI: 10.1109/led.2007.891668

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📄 Abstract

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs

📄 Abstract

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