Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

Depletion-mode field-plated Ga2O3metal-oxide-semiconductor field-effect transistors were demonstrated for the first time. Substantial enhancement in breakdown voltage was achieved with a gate-connected field plate. The device channels, formed by selective-area Si ion implantation doping of an undoped Ga2O3epilayer, were electrically isolated by the highly resistive epilayer without mesa etching. Effective surface passivation and high Ga2O3material quality contributed to the absence of drain current collapse. The transistors exhibited an off-state breakdown voltage of 755 V, a high drain current on/off ratio of over 109, and stable high temperature operation against 300°C thermal stress.