Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

The performance limits of monolayer transition metal dichalcogenide ( MX2) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX2. We find the lattice structures of monolayer MX2remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX2promising 2-D materials for future nanoelectronic device applications.